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BC856W ... BC859W
BC856W ... BC859W PNP
Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren fur die Oberflachenmontage Power dissipation - Verlustleistung
2 0.3
0.1
PNP
200 mW SOT-323 0.01 g
Version 2006-06-27
1
0.1
3
Plastic case Kunststoffgehause
1.250.1
Type Code
1 2
0.1
2.1
Weight approx. - Gewicht ca. Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle
1.3
Dimensions - Mae [mm] 1=B 2=E 3=C
Maximum ratings (TA = 25C)
Grenzwerte (TA = 25C) BC856W BC857W 45 V 50 V 5V 200 mW 1) 100 mA 200 mA 200 mA 200 mA -55...+150C -55...+150C BC858W BC859W 30 V 30 V
Collector-Emitter-volt. - Kollektor-Emitter-Spannung B open Collector-Base-voltage - Kollektor-Basis-Spannung Emitter-Base-voltage - Emitter-Basis-Spannung Power dissipation - Verlustleistung Collector current - Kollektorstrom (dc) Peak Collector current - Kollektor-Spitzenstrom Peak Base current - Basis-Spitzenstrom Peak Emitter current - Emitter-Spitzenstrom Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur E open C open
- VCBO - VCEO - VEB0 Ptot - IC - ICM - IBM IEM Tj TS
65 V 80 V
Characteristics (Tj = 25C) Min. DC current gain - Kollektor-Basis-Stromverhaltnis - VCE = 5 V, - IC = 10 A Group A Group B Group C Group A Group B Group C hFE hFE hFE hFE hFE hFE - VCEsat - VCEsat - - - 125 220 420 - -
Kennwerte (Tj = 25C) Typ. 140 250 480 180 290 520 75 mV 250 mV Max. - - - 250 475 800 300 mV 650 mV
- VCE = 5 V, - IC = 2 mA
Collector-Emitter saturation voltage - Kollektor-Sattigungsspannung 2) - IC = 10 mA, - IB = 0.5 mA - IC = 100 mA, - IB = 5 mA
1 2
Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% http://www.diotec.com/
(c) Diotec Semiconductor AG
1
BC856W ... BC859W Characteristics (Tj = 25C) Min. Base-Emitter saturation voltage - Basis-Sattigungsspannung 2) - IC = 10 mA, - IB = 0.5 mA - IC = 100 mA, - IB = 5 mA Base-Emitter-voltage - Basis-Emitter-Spannung 2) - VCE = 5 V, - IC = 2 mA - VCE = 5 V, - IC = 10 mA Collector-Base cutoff current - Kollektor-Basis-Reststrom - VCB = 30 V, (E open) - VCE = 30 V, Tj = 125C, (E open) Emitter-Base cutoff current - VEB = 5 V, (C open) Gain-Bandwidth Product - Transitfrequenz - VCE = 5 V, - IC = 10 mA, f = 100 MHz Collector-Base Capacitance - Kollektor-Basis-Kapazitat - VCB = 10 V, IE =ie = 0, f = 1 MHz Emitter-Base Capacitance - Emitter-Basis-Kapazitat - VEB = 0.5 V, IC = ic = 0, f = 1 MHz Noise figure - Rauschzahl - VCE = 5 V, - IC = 200 A, RG = 2 k f = 1 kHz, f = 200 Hz BC856W ... BC858W BC859W F F RthA - - - 1 dB < 620 K/W 1) BC846W ... BC849W BC856AW = 3A BC857AW = 3E BC858AW = 3J BC856BW = 3B BC857BW = 3F BC858BW = 3K BC859BW = 4B BC857CW = 3G BC858CW = 3L BC859CW = 4C 10 dB 4 dB CEB0 - 10 pF 15 pF CCBO - - 4.5 pF fT 100 MHz - - - IEB0 - - 100 nA - ICB0 - ICB0 - - - - 15 nA 5 A - VBE - VBE 600 mV - 650 mV - 750 mV 820 mV - VBEsat - VBEsat - - 700 mV 850 mV - - Kennwerte (Tj = 25C) Typ. Max.
Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Recommended complementary NPN transistors Empfohlene komplementare NPN-Transistoren Marking of available current gain groups per type Stempelung der lieferbare Stromverstarkungsgruppen pro Typ
2 1
Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss http://www.diotec.com/ (c) Diotec Semiconductor AG
2

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